Infineon IPG20N06S4L-14A 2 Type N-Channel MOSFET, 20 A, 60 V Enhancement, 8-Pin SuperSO8 5 x 6

Subtotal (1 reel of 5000 units)*

Kr.23 940 00 

(exc. VAT)

Kr.29 925 00 

(inc. VAT)

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5000 +Kr. 4,788Kr. 23 940,00

*price indicative

RS Stock No.:
241-9687
Mfr. Part No.:
IPG20N06S4L14AATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

60V

Series

IPG20N06S4L-14A

Package Type

SuperSO8 5 x 6

Pin Count

8

Maximum Drain Source Resistance Rds

13.7mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

39nC

Maximum Power Dissipation Pd

50W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±16 V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS Compliant

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

The Infineon OptiMOS™-T2 N-channel automotive MOSFET has 60 V drain source voltage (VDS) & 20 A drain current (ID). It comes in dual SS08 (PG-TDSON-8) package. It is feasible for automatic optical inspection (AOI).

Dual N-channel Logic Level - Enhancement mode

AEC Q101 qualified

MSL1 up to 260°C peak reflow

175°C operating temperature

Green Product (RoHS compliant)

100% Avalanche tested

Feasible for automatic optical inspection (AOI)

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