Infineon BSZ Type N-Channel MOSFET, 212 A, 40 V N, 8-Pin TSDSON-8 FL BSZ0500NSIATMA1
- RS Stock No.:
- 241-9887
- Mfr. Part No.:
- BSZ0500NSIATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
Kr.37 35
(exc. VAT)
Kr.46 688
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 9 580 unit(s) shipping from 05. januar 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | Kr. 18,675 | Kr. 37,35 |
| 20 - 48 | Kr. 16,875 | Kr. 33,75 |
| 50 - 98 | Kr. 15,615 | Kr. 31,23 |
| 100 - 198 | Kr. 14,53 | Kr. 29,06 |
| 200 + | Kr. 13,555 | Kr. 27,11 |
*price indicative
- RS Stock No.:
- 241-9887
- Mfr. Part No.:
- BSZ0500NSIATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 212A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TSDSON-8 FL | |
| Series | BSZ | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.7mΩ | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 212A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TSDSON-8 FL | ||
Series BSZ | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.7mΩ | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon OptiMOS 5 Power-Transistor is a N channel power MOSFET which is optimized for high performance buck converters. It has Pb-free lead plating.
Monolithically integrated Schottky-like diode
Very low on-resistance
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