Infineon BSZ Type N-Channel MOSFET, 104 A, 60 V N, 8-Pin TSDSON BSZ037N06LS5ATMA1
- RS Stock No.:
- 258-0712
- Mfr. Part No.:
- BSZ037N06LS5ATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
Kr.49 19
(exc. VAT)
Kr.61 488
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 4 900 unit(s) shipping from 19. januar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | Kr. 24,595 | Kr. 49,19 |
| 20 - 48 | Kr. 19,85 | Kr. 39,70 |
| 50 - 98 | Kr. 18,59 | Kr. 37,18 |
| 100 - 198 | Kr. 17,505 | Kr. 35,01 |
| 200 + | Kr. 16,245 | Kr. 32,49 |
*price indicative
- RS Stock No.:
- 258-0712
- Mfr. Part No.:
- BSZ037N06LS5ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 104A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TSDSON | |
| Series | BSZ | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5.3mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.8V | |
| Typical Gate Charge Qg @ Vgs | 35nC | |
| Maximum Power Dissipation Pd | 69W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | IEC 61249-2-21, RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 104A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TSDSON | ||
Series BSZ | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5.3mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.8V | ||
Typical Gate Charge Qg @ Vgs 35nC | ||
Maximum Power Dissipation Pd 69W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals IEC 61249-2-21, RoHS | ||
Automotive Standard No | ||
The Infineon OptiMOS 5 60V power MOSFET comprises a perfect fit for optimized efficiency and power density solutions such as synchronous rectification in switched mode power supplies, for telecom bricks and server applications, as well as portable chargers. The small footprint of only 3.3x3.3mm2 combined with outstanding electrical performance further contributes towards best-in-class power density and form factor improvement in the end application.
Monolithically integrated Schottky-like diode
Ultra low charges
Ideal for high performance applications
RoHS compliant - halogen free
Less paralleling required
Very low voltage overshoot
Reduced need for snubber circuit
Related links
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- Infineon BSZ Type N-Channel MOSFET 25 V N, 8-Pin TSDSON