Infineon IQE Type N-Channel MOSFET, 253 A, 30 V, 8-Pin PQFN IQE006NE2LM5CGATMA1

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Kr.48 05 

(exc. VAT)

Kr.60 062 

(inc. VAT)

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2 - 18Kr. 24,025Kr. 48,05
20 - 48Kr. 21,395Kr. 42,79
50 - 98Kr. 19,905Kr. 39,81
100 - 198Kr. 18,535Kr. 37,07
200 +Kr. 17,045Kr. 34,09

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Packaging Options:
RS Stock No.:
242-0307
Mfr. Part No.:
IQE006NE2LM5CGATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

253A

Maximum Drain Source Voltage Vds

30V

Series

IQE

Package Type

PQFN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.2mΩ

Forward Voltage Vf

0.73V

Typical Gate Charge Qg @ Vgs

80nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

81W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Length

3.3mm

Automotive Standard

AEC-Q101

The Infineon OptiMOS 5 power transistor is a N channel MOSFET which has Pb-free lead plating and is RoHS compliant. It is 100% avalanche tested.

Halogen-free according to IEC61249-2-21

Fully qualified according to JEDEC for Industrial Applications

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