Infineon IQE N-Channel MOSFET, 253 A, 30 V, 8-Pin PQFN IQE006NE2LM5ATMA1

Subtotal (1 reel of 5000 units)*

Kr. 66 175,00

(exc. VAT)

Kr. 82 720,00

(inc. VAT)

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Units
Per unit
Per Reel*
5000 +Kr. 13,235Kr. 66 175,00

*price indicative

RS Stock No.:
242-0304
Mfr. Part No.:
IQE006NE2LM5ATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

253A

Maximum Drain Source Voltage Vds

30V

Package Type

PQFN

Series

IQE

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.2mΩ

Maximum Power Dissipation Pd

81W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20V

Typical Gate Charge Qg @ Vgs

80nC

Forward Voltage Vf

730mV

Maximum Operating Temperature

175°C

Length

3.3mm

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon OptiMOS 5 power transistor is a N channel MOSFET which has very low on resistance. It is fully qualified according to JEDEC for Industrial Applications.

100% avalanche tested

Superior thermal resistance

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