Infineon IQE Type N-Channel MOSFET, 253 A, 30 V, 8-Pin PQFN IQE006NE2LM5ATMA1
- RS Stock No.:
- 242-0305
- Mfr. Part No.:
- IQE006NE2LM5ATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
Kr.33 52
(exc. VAT)
Kr.41 90
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Stock information currently inaccessible
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | Kr. 16,76 | Kr. 33,52 |
| 20 - 48 | Kr. 14,76 | Kr. 29,52 |
| 50 - 98 | Kr. 13,73 | Kr. 27,46 |
| 100 - 198 | Kr. 12,925 | Kr. 25,85 |
| 200 + | Kr. 11,90 | Kr. 23,80 |
*price indicative
- RS Stock No.:
- 242-0305
- Mfr. Part No.:
- IQE006NE2LM5ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 253A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | IQE | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.2mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 81W | |
| Forward Voltage Vf | 0.73V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 3.3mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 253A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series IQE | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.2mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 81W | ||
Forward Voltage Vf 0.73V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature 175°C | ||
Length 3.3mm | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS 5 power transistor is a N channel MOSFET which has very low on resistance. It is fully qualified according to JEDEC for Industrial Applications.
100% avalanche tested
Superior thermal resistance
Related links
- Infineon IQE Type N-Channel MOSFET 30 V, 8-Pin PQFN
- Infineon IQE Type N-Channel MOSFET 30 V, 8-Pin PQFN IQE065N10NM5ATMA1
- Infineon IQE Type N-Channel MOSFET 30 V, 8-Pin PQFN IQE065N10NM5CGATMA1
- Infineon IQE Type N-Channel MOSFET 30 V, 8-Pin PQFN IQE008N03LM5CGATMA1
- Infineon IQE Type N-Channel MOSFET 30 V, 8-Pin PQFN IQE050N08NM5CGATMA1
- Infineon IQE Type N-Channel MOSFET 30 V, 8-Pin PQFN IQE030N06NM5CGATMA1
- Infineon IQE Type N-Channel MOSFET 30 V, 8-Pin PQFN IQE006NE2LM5CGATMA1
- Infineon IQE Type N-Channel MOSFET 30 V, 8-Pin PQFN IQE050N08NM5ATMA1