Infineon IPA Type N-Channel MOSFET, 84 A, 40 V N, 3-Pin TO-220 IPA80R1K2P7XKSA1
- RS Stock No.:
- 242-0986
- Mfr. Part No.:
- IPA80R1K2P7XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
Kr.37 59
(exc. VAT)
Kr.46 988
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- 414 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | Kr. 18,795 | Kr. 37,59 |
| 20 - 48 | Kr. 16,93 | Kr. 33,86 |
| 50 - 98 | Kr. 16,015 | Kr. 32,03 |
| 100 - 198 | Kr. 14,87 | Kr. 29,74 |
| 200 + | Kr. 13,73 | Kr. 27,46 |
*price indicative
- RS Stock No.:
- 242-0986
- Mfr. Part No.:
- IPA80R1K2P7XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 84A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | IPA | |
| Package Type | TO-220 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.9mΩ | |
| Channel Mode | N | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 81W | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 84A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series IPA | ||
Package Type TO-220 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.9mΩ | ||
Channel Mode N | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 81W | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon N-channel MOSFET provide a maximum continous drain current is 4.5 A and drain source voltage is 800 V. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. The operating temperature of MOSFET is ranges from -55 °C to 150 °C.
Best-in-class performance.
Enabling higher power density designs
BOM savings and lower assembly costs
Easy to drive and to parallel
Better production yield by reducing ESD related failures
Less production issues and reduced field returns
Easy to select right parts for fine tuning of designs
Related links
- Infineon N-Channel MOSFET 800 V, 3-Pin TO-220 FP IPA80R1K2P7XKSA1
- Infineon N-Channel MOSFET 800 V, 3-Pin DPAK IPD80R1K2P7ATMA1
- Infineon N-Channel MOSFET 800 V, 3-Pin SOT-223 IPN80R1K2P7ATMA1
- Infineon N-Channel MOSFET 800 V, 5-Pin ThinPAK 5 x 6 IPLK80R1K2P7ATMA1
- Infineon CoolMOS™ P7 N-Channel MOSFET 800 V, 3-Pin TO-220 IPP80R1K2P7XKSA1
- Infineon CoolMOS™ C3 N-Channel MOSFET 800 V, 3-Pin TO-220 FP SPA17N80C3XKSA1
- Infineon CoolMOS™ P7 N-Channel MOSFET 800 V, 3-Pin TO-220 FP IPA80R750P7XKSA1
- Infineon CoolMOS™ Silicon N-Channel MOSFET 800 V, 3-Pin TO-220 FP IPAN80R280P7XKSA1