Infineon iPB Type P-Channel MOSFET, 273 A, 100 V N, 3-Pin TO-263

Subtotal (1 reel of 1000 units)*

Kr.22 826 00 

(exc. VAT)

Kr.28 532 00 

(inc. VAT)

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Units
Per unit
Per Reel*
1000 +Kr. 22,826Kr. 22 826,00

*price indicative

RS Stock No.:
243-9267
Mfr. Part No.:
IPB110P06LMATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

273A

Maximum Drain Source Voltage Vds

100V

Series

iPB

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.7mΩ

Channel Mode

N

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

81W

Typical Gate Charge Qg @ Vgs

80nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.1V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon P-Channel small signal transistor have Pb-free lead plating. The drain current and drain-source voltage of MOSFET is 100 A and -60V respectively. It has very low resistance value. The operating temperature is ranges from -55 °C to 150 °C.

Surface Mount technology

Logic level availability

Easy interface to Microcontroller Unit (MCU)

Fast switching

avalanche ruggedness

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