Infineon iPB Type N-Channel MOSFET, 273 A, 100 V N, 3-Pin TO-263 IPB048N15N5ATMA1

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Kr.52 78 

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Kr.65 98 

(inc. VAT)

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1 - 9Kr. 52,78
10 - 24Kr. 50,14
25 - 49Kr. 48,03
50 - 99Kr. 45,81
100 +Kr. 42,70

*price indicative

Packaging Options:
RS Stock No.:
242-5819
Mfr. Part No.:
IPB048N15N5ATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

273A

Maximum Drain Source Voltage Vds

100V

Series

iPB

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.7mΩ

Channel Mode

N

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

80nC

Maximum Power Dissipation Pd

81W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon MOSFET is particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications. The products offer a breakthrough reduction in R DS(on) (up to 25% compared to the next best alternative in SuperSO8) and Q rr without compromising FOM gd and FOM OSS, effectively reducing design effort whilst optimizing system efficiency.

Lower R DS(on) without compromising FOMgd and FOMoss

Lower output charge

Ultra-low reverse recovery charge(Q rr = 26 nC in SuperSO8)

175°C operating temperature

Pb-free lead plating

RoHS compliant

Drain-source breakdown voltage 150V

Maximum Drain current 120A

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