Infineon ISP Type P-Channel MOSFET, 2.8 A, 60 V Enhancement, 3-Pin SOT-223 ISP12DP06NMXTSA1

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Subtotal (1 pack of 5 units)*

Kr.50 31 

(exc. VAT)

Kr.62 89 

(inc. VAT)

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Per Pack*
5 - 45Kr. 10,062Kr. 50,31
50 - 120Kr. 8,946Kr. 44,73
125 - 245Kr. 8,442Kr. 42,21
250 - 495Kr. 7,848Kr. 39,24
500 +Kr. 7,23Kr. 36,15

*price indicative

Packaging Options:
RS Stock No.:
243-9271
Mfr. Part No.:
ISP12DP06NMXTSA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

2.8A

Maximum Drain Source Voltage Vds

60V

Package Type

SOT-223

Series

ISP

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.7mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

81W

Typical Gate Charge Qg @ Vgs

80nC

Forward Voltage Vf

1.1V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon P-Channel small signal transistor have Pb-free lead plating. The drain current and drain-source voltage of MOSFET is -2.8 A and -60V respectively. It has very low resistance value. The operating temperature is ranges from -55 °C to 150 °C.

Surface Mount technology

Logic level availability

Easy interface to Microcontroller Unit (MCU)

Fast switching

avalanche ruggedness

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