Infineon IAUC N-Channel MOSFET, 80 A, 20 V Enhancement, 8-Pin SuperSO8 5 x 6

RS Stock No.:: 243-9316
Mfr. Part No.:: IAUC80N04S6N036ATMA1
Brand:: Infineon

Infineon IAUC N-Channel MOSFET, 80 A, 20 V Enhancement, 8-Pin SuperSO8 5 x 6

Subtotal (1 reel of 5000 units)*

Kr. 14 055,00

(exc. VAT)

Kr. 17 570,00

(inc. VAT)

FREE delivery for online orders over 750,00 kr

In Stock

Plus 5 000 unit(s) shipping from 28 September 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
5000 +	Kr. 2,811	Kr. 14 055,00

*price indicative

RS Stock No.:: 243-9316
Mfr. Part No.:: IAUC80N04S6N036ATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	80A
	Maximum Drain Source Voltage Vds	20V
	Package Type	SuperSO8 5 x 6
	Series	IAUC
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	1.4mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.1V
	Typical Gate Charge Qg @ Vgs	80nC
	Maximum Gate Source Voltage Vgs	20V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	81W
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 80A
	Maximum Drain Source Voltage Vds 20V
	Package Type SuperSO8 5 x 6
	Series IAUC
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 1.4mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.1V
	Typical Gate Charge Qg @ Vgs 80nC
	Maximum Gate Source Voltage Vgs 20V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 81W
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - IAUC80N04S6N036ATMA1

Infineon IAUC Series MOSFET, 20V Maximum Drain Source Voltage, 80A Maximum Continuous Drain Current - IAUC80N04S6N036ATMA1

This MOSFET is a power-switching transistor designed for high-current, surface-mount applications in harsh environments. It operates as an N-channel enhancement device and is suited to thermal and electrical duty where elevated temperatures and robust current handling are required. The component is RoHS approved and built to automotive qualification standards for use in demanding vehicle electronics.

Features and Benefits:

• Maximum continuous drain current 80 A enables high-current delivery
• Very low RDS(on) 1.4 mΩ reduces conduction losses
• Maximum power dissipation 81 W supports heavy switching loads
• Gate charge Qg 80 nC allows predictable drive requirements
• Maximum VDS 20 V permits low-voltage system integration

Applications

• Suitable for DC-DC converter stages in automotive systems
• Used with power-management modules in electrified vehicles
• Ideal for motor-drive MOSFET stages in auxiliary systems
• Can be used for battery protection and power distribution

What gate-drive considerations are necessary for efficient switching?

Expect a typical total gate charge of 80 nC, so gate drivers must source and sink adequate current to achieve desired switching speeds while managing switching losses.

How does thermal range affect deployment in vehicle electronics?

The device supports operation from -55°C to 175°C, enabling placement near heat-generating components and within engine-bay ambient conditions.

What mounting and package constraints apply to circuit layout?

It is supplied in a SuperSO8 5x6 surface-mount package with eight pins, requiring a PCB footprint and thermal management consistent with that package type.

Which voltage and polarity limitations should designers observe?

The device has a maximum gate-to-source voltage of 20 V and a maximum drain-to-source voltage of 20 V, so system voltages must remain within those limits.