Infineon IAUC N-Channel MOSFET, 24 A, 100 V Enhancement, 8-Pin SuperSO8 5 x 6 IAUC24N10S5L300ATMA1
- RS Stock No.:
- 243-9338
- Mfr. Part No.:
- IAUC24N10S5L300ATMA1
- Brand:
- Infineon
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Kr. 86,49
(exc. VAT)
Kr. 108,11
(inc. VAT)
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- Plus 2 355 unit(s) shipping from 28 September 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | Kr. 17,298 | Kr. 86,49 |
| 50 - 120 | Kr. 15,536 | Kr. 77,68 |
| 125 - 245 | Kr. 14,712 | Kr. 73,56 |
| 250 - 495 | Kr. 13,682 | Kr. 68,41 |
| 500 + | Kr. 12,606 | Kr. 63,03 |
*price indicative
- RS Stock No.:
- 243-9338
- Mfr. Part No.:
- IAUC24N10S5L300ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 24A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | IAUC | |
| Package Type | SuperSO8 5 x 6 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.4mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 24A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series IAUC | ||
Package Type SuperSO8 5 x 6 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.4mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Infineon IAUC Series MOSFET, 100V Maximum Drain Source Voltage, 24A Maximum Continuous Drain Current - IAUC24N10S5L300ATMA1
This MOSFET is a high-voltage N-channel switch intended for power-management roles in Compact surface-mounted assemblies. It operates across an extended temperature range and is suited to applications requiring low on-resistance and significant continuous drain current capacity within surface-mount packages.
Features and Benefits:
• 1.4mΩ RDS(on) delivers reduced conduction losses under load
• 24A continuous drain current supports sustained power delivery
• 100V drain-source rating enables high-voltage switching tasks
• 81W power dissipation manages thermal load in confined layouts
• 80nC typical gate charge enables controlled switching for converters
• 20V gate-source rating permits robust gate drive headroom
• 24A continuous drain current supports sustained power delivery
• 100V drain-source rating enables high-voltage switching tasks
• 81W power dissipation manages thermal load in confined layouts
• 80nC typical gate charge enables controlled switching for converters
• 20V gate-source rating permits robust gate drive headroom
Applications
• Suitable for DC-DC converter switching stages in power rails
• Ideal for automotive power control modules requiring AEC‑Q101
• Used with high-voltage motor drivers and boost circuits
• Can be used for Compact surface-mount power-supply designs
• Suitable for high-current load switching in embedded systems
• Ideal for automotive power control modules requiring AEC‑Q101
• Used with high-voltage motor drivers and boost circuits
• Can be used for Compact surface-mount power-supply designs
• Suitable for high-current load switching in embedded systems
What thermal extremes can it tolerate in operation?
It is specified to operate from −55°C up to 175°C.
What mounting form should designers plan for?
It is supplied in a SuperSO8 5x6 surface-mount package for PCB assembly.
Which channel polarity and mode does it employ?
It is an N-channel device operated in enhancement mode.
Is it compliant with common environmental directives?
It meets RoHS requirements.
What forward voltage characteristic might impact low-voltage designs?
The typical forward voltage is 1.1V, which influences conduction-drop calculations.
Related links
- Infineon IAUC N-Channel MOSFET 100 V Enhancement, 8-Pin SuperSO8 5 x 6
- Infineon IAUC N-Channel MOSFET 40 V Enhancement, 8-Pin SuperSO8 5 x 6
- Infineon IAUC N-Channel MOSFET 20 V Enhancement, 8-Pin SuperSO8 5 x 6
- Infineon IAUC N-Channel MOSFET 40 V Enhancement, 8-Pin SuperSO8 5 x 6
- Infineon IAUC N-Channel MOSFET 20 V Enhancement, 8-Pin SuperSO8 5 x 6
- Infineon IAUC N-Channel MOSFET 40 V Enhancement, 8-Pin SuperSO8 5 x 6
- Infineon IAUC N-Channel MOSFET 40 V Enhancement, 8-Pin SuperSO8 5 x 6 IAUC100N04S6L014ATMA1
- Infineon IAUC N-Channel MOSFET 40 V Enhancement, 8-Pin SuperSO8 5 x 6 IAUC100N10S5L040ATMA1
