Infineon IPD N-Channel MOSFET, 180 A, 40 V P, 3-Pin TO-252 IPD5N25S3430ATMA1

RS Stock No.:: 244-1594
Mfr. Part No.:: IPD5N25S3430ATMA1
Brand:: Infineon

Infineon IPD N-Channel MOSFET, 180 A, 40 V P, 3-Pin TO-252 IPD5N25S3430ATMA1

Bulk discount available

View bulk pricing options

Subtotal (1 pack of 5 units)*

Kr. 58,92

(exc. VAT)

Kr. 73,65

(inc. VAT)

Stock information currently inaccessible - Please check back later

Units	Per unit	Per Pack*
5 - 20	Kr. 11,784	Kr. 58,92
25 - 45	Kr. 11,212	Kr. 56,06
50 - 120	Kr. 10,044	Kr. 50,22
125 - 245	Kr. 9,06	Kr. 45,30
250 +	Kr. 8,626	Kr. 43,13

*price indicative

RS Stock No.:: 244-1594
Mfr. Part No.:: IPD5N25S3430ATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	180A
	Maximum Drain Source Voltage Vds	40V
	Package Type	TO-252
	Series	IPD
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	1.4mΩ
	Channel Mode	P
	Typical Gate Charge Qg @ Vgs	80nC
	Maximum Power Dissipation Pd	81W
	Forward Voltage Vf	1.1V
	Maximum Gate Source Voltage Vgs	20V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 180A
	Maximum Drain Source Voltage Vds 40V
	Package Type TO-252
	Series IPD
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 1.4mΩ
	Channel Mode P
	Typical Gate Charge Qg @ Vgs 80nC
	Maximum Power Dissipation Pd 81W
	Forward Voltage Vf 1.1V
	Maximum Gate Source Voltage Vgs 20V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - IPD5N25S3430ATMA1

Infineon IPD Series MOSFET, 40V Maximum Drain Source Voltage, 180A Maximum Continuous Drain Current - IPD5N25S3430ATMA1

This MOSFET is a high-current switching transistor designed for demanding electronic power stages and automotive environments, delivering robust conduction and controlled gate drive behaviour across an extended temperature range.

Features and Benefits:

• 40V drain rating enables low-voltage power system switching
• 180A continuous drain current supports high-current loads
• 1.4mΩ low Rds(on) reduces conduction losses in heavy current paths
• 81W power dissipation allows sustained thermal loading
• 80nC typical gate charge facilitates predictable switching energy
• 20V gate tolerance accepts common gate-drive voltages

Applications

• Suitable for automotive powertrain inverter and motor stages
• Ideal for DC-DC converter output stage implementations
• Used with battery management modules in electric vehicles
• Can be used for high-current load switching on PCBs
• Used for surface-mount power assemblies in harsh environments

What thermal extremes can it tolerate during operation?

It operates across an ambient span from -55°C up to 175°C.

Which package and mounting style are provided for assembly?

It is supplied in a TO-252 package intended for surface mounting.

What polarity and conduction mode does it employ?

The device uses an N-type channel operating in P-mode configuration.

Is it compliant with environmental or industry standards?

It meets RoHS requirements and conforms to automotive AEC-Q101 criteria.

How many terminals are available for circuit connections?

It provides three pins for gate, drain and source connectivity.