Infineon IPD Type N-Channel MOSFET, 67 A, 100 V P, 3-Pin TO-252

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Subtotal (1 reel of 2500 units)*

Kr.15 210 00 

(exc. VAT)

Kr.19 012 50 

(inc. VAT)

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Units
Per unit
Per Reel*
2500 +Kr. 6,084Kr. 15 210,00

*price indicative

RS Stock No.:
258-3834
Mfr. Part No.:
IPD12CN10NGATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

67A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-252

Series

IPD

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

12.4mΩ

Channel Mode

P

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

125W

Typical Gate Charge Qg @ Vgs

49nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon OptiMOS power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM

Excellent switching performance

World’s lowest R DS(on)

Environmentally friendly

Increased efficiency

Highest power density

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