Infineon IPD Type N-Channel MOSFET, 67 A, 100 V P, 3-Pin TO-252 IPD12CN10NGATMA1

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Subtotal (1 pack of 2 units)*

Kr.43 83 

(exc. VAT)

Kr.54 788 

(inc. VAT)

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Per Pack*
2 - 18Kr. 21,915Kr. 43,83
20 - 48Kr. 18,875Kr. 37,75
50 - 98Kr. 17,73Kr. 35,46
100 - 198Kr. 16,475Kr. 32,95
200 +Kr. 15,16Kr. 30,32

*price indicative

Packaging Options:
RS Stock No.:
258-3835
Mfr. Part No.:
IPD12CN10NGATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

67A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-252

Series

IPD

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

12.4mΩ

Channel Mode

P

Maximum Power Dissipation Pd

125W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

49nC

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon OptiMOS power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM

Excellent switching performance

World’s lowest R DS(on)

Environmentally friendly

Increased efficiency

Highest power density

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