DiodesZetex 2 Type N, Type P-Channel MOSFET, 4.6 A, 20 V Enhancement, 6-Pin SOT-363

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Subtotal (1 reel of 3000 units)*

Kr.1 773 00 

(exc. VAT)

Kr.2 217 00 

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +Kr. 0,591Kr. 1 773,00

*price indicative

RS Stock No.:
246-6770
Mfr. Part No.:
DMC2710UDWQ-7
Brand:
DiodesZetex
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Brand

DiodesZetex

Channel Type

Type N, Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

4.6A

Maximum Drain Source Voltage Vds

20V

Package Type

SOT-363

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

1.5Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

0.38W

Typical Gate Charge Qg @ Vgs

0.7nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±6 V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Number of Elements per Chip

2

Automotive Standard

No

The DiodesZetex makes a complementary pair enhancement mode MOSFET, designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in SOT363 packaging and 0.6mm profile makes it ideal for low profile applications . It offers fast switching and high efficiency. Its 100% unclamped inductive switching ensures more reliable and robust end application.

Maximum drain to source voltage is 20 V Maximum gate to source voltage is ±6 V It offers a ultra-small package size Its thermally efficient package enables higher density end products

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