DiodesZetex Type N, Type P-Channel MOSFET, 4.6 A, 20 V Enhancement, 6-Pin UDFN-2020 DMC2053UFDBQ-7

Bulk discount available

Subtotal (1 pack of 25 units)*

Kr.96 10 

(exc. VAT)

Kr.120 125 

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 2 675 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
25 - 25Kr. 3,844Kr. 96,10
50 - 75Kr. 3,766Kr. 94,15
100 - 225Kr. 2,791Kr. 69,78
250 - 975Kr. 2,714Kr. 67,85
1000 +Kr. 2,654Kr. 66,35

*price indicative

Packaging Options:
RS Stock No.:
246-7497
Mfr. Part No.:
DMC2053UFDBQ-7
Brand:
DiodesZetex
Find similar products by selecting one or more attributes.
Select all

Brand

DiodesZetex

Product Type

MOSFET

Channel Type

Type N, Type P

Maximum Continuous Drain Current Id

4.6A

Maximum Drain Source Voltage Vds

20V

Package Type

UDFN-2020

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

0.056Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

12 V

Maximum Power Dissipation Pd

1.14W

Typical Gate Charge Qg @ Vgs

7.7nC

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The DiodesZetex makes a complementary pair enhancement mode MOSFET, designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in U-DFN2020-6 packaging and 0.6mm profile makes it ideal for low profile applications . It offers fast switching and high efficiency. Its 100% unclamped inductive switching ensures more reliable and robust end application.

Maximum drain to source voltage is 20 V Maximum gate to source voltage is ±12 V It has PCB Footprint of 4mm^2 It offers low gate threshold voltage It provides an ESD protected Gate

Related links