DiodesZetex DMN Type N-Channel MOSFET, 0.9 A, 20 V Enhancement, 3-Pin X1-DFN

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Subtotal (1 reel of 3000 units)*

Kr.1 680 00 

(exc. VAT)

Kr.2 100 00 

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +Kr. 0,56Kr. 1 680,00

*price indicative

RS Stock No.:
246-6794
Mfr. Part No.:
DMN2310UFD-7
Brand:
DiodesZetex
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Brand

DiodesZetex

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

0.9A

Maximum Drain Source Voltage Vds

20V

Package Type

X1-DFN

Series

DMN

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.6mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

0.7nC

Maximum Gate Source Voltage Vgs

12 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

890mW

Maximum Operating Temperature

150°C

Length

1.25mm

Height

0.53mm

Width

1.25 mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

The DiodesZetex makes a dual N-channel enhancement mode MOSFET, designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in U-DFN1212-3 packaging. It offers fast switching and high efficiency. Its 100% unclamped inductive switching ensures more reliable and robust end application.

Maximum drain to source voltage is 20 V and Maximum gate to source voltage is ±8 V It offers a ultra-small package size It has low input/output leakage

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