DiodesZetex DMN Type N-Channel MOSFET, 0.9 A, 20 V Enhancement, 3-Pin X1-DFN DMN2310UFD-7
- RS Stock No.:
- 246-7511
- Mfr. Part No.:
- DMN2310UFD-7
- Brand:
- DiodesZetex
Bulk discount available
Subtotal (1 pack of 25 units)*
Kr.13 95
(exc. VAT)
Kr.17 45
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 2 875 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | Kr. 0,558 | Kr. 13,95 |
| 50 - 75 | Kr. 0,554 | Kr. 13,85 |
| 100 - 225 | Kr. 0,453 | Kr. 11,33 |
| 250 - 975 | Kr. 0,439 | Kr. 10,98 |
| 1000 + | Kr. 0,43 | Kr. 10,75 |
*price indicative
- RS Stock No.:
- 246-7511
- Mfr. Part No.:
- DMN2310UFD-7
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 0.9A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | X1-DFN | |
| Series | DMN | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.6mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 890mW | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 0.7nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 1.25 mm | |
| Height | 0.53mm | |
| Length | 1.25mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 0.9A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type X1-DFN | ||
Series DMN | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.6mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 890mW | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 0.7nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 1.25 mm | ||
Height 0.53mm | ||
Length 1.25mm | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex makes a dual N-channel enhancement mode MOSFET, designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in U-DFN1212-3 packaging. It offers fast switching and high efficiency. Its 100% unclamped inductive switching ensures more reliable and robust end application.
Maximum drain to source voltage is 20 V and Maximum gate to source voltage is ±8 V It offers a ultra-small package size It has low input/output leakage
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