DiodesZetex Type N, Type P-Channel MOSFET, 60 V Enhancement, 8-Pin SOIC DMHC6070LSD-13

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Subtotal (1 pack of 10 units)*

Kr.112 65 

(exc. VAT)

Kr.140 81 

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 40Kr. 11,265Kr. 112,65
50 - 90Kr. 11,017Kr. 110,17
100 - 240Kr. 8,752Kr. 87,52
250 - 990Kr. 8,546Kr. 85,46
1000 +Kr. 7,756Kr. 77,56

*price indicative

Packaging Options:
RS Stock No.:
246-7504
Mfr. Part No.:
DMHC6070LSD-13
Brand:
DiodesZetex
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Brand

DiodesZetex

Product Type

MOSFET

Channel Type

Type N, Type P

Maximum Drain Source Voltage Vds

60V

Package Type

SOIC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.25Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

11.5nC

Maximum Power Dissipation Pd

1.6W

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The DiodesZetex makes a new generation complementary MOSFET H-Bridge, that features low on-resistance achievable with low gate drive. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in SO-8 packaging. It offers fast switching and low input capacitance. It has working temperature range of -55°C to +150°C.

Maximum drain to source voltage is 60 V and maximum gate to source voltage is ±20 V 2 N-channel and 2 P-channels in a SOIC package It offers low on-resistance

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