DiodesZetex Type P-Channel MOSFET, 79 A, 40 V Enhancement, 3-Pin TO-252 DMPH4011SK3-13
- RS Stock No.:
- 246-7536
- Mfr. Part No.:
- DMPH4011SK3-13
- Brand:
- DiodesZetex
Bulk discount available
Subtotal (1 pack of 5 units)*
Kr.40 06
(exc. VAT)
Kr.50 075
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 2 355 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | Kr. 8,012 | Kr. 40,06 |
| 50 - 95 | Kr. 7,184 | Kr. 35,92 |
| 100 - 245 | Kr. 5,812 | Kr. 29,06 |
| 250 - 995 | Kr. 5,652 | Kr. 28,26 |
| 1000 + | Kr. 5,536 | Kr. 27,68 |
*price indicative
- RS Stock No.:
- 246-7536
- Mfr. Part No.:
- DMPH4011SK3-13
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 79A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 41mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Power Dissipation Pd | 1.73W | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.58mm | |
| Height | 2.29mm | |
| Standards/Approvals | No | |
| Width | 6.1 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 79A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 41mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Power Dissipation Pd 1.73W | ||
Maximum Operating Temperature 175°C | ||
Length 6.58mm | ||
Height 2.29mm | ||
Standards/Approvals No | ||
Width 6.1 mm | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex makes a new generation dual N-channel enhancement mode MOSFET, it has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in TO252 packaging. It offers fast switching and high efficiency. It is rated to +175°C and ideal for high ambient temperature environments. Its 100% unclamped inductive switching ensures more reliable and robust end application.
Maximum drain to source voltage is 40 V and maximum gate to source voltage is ±20 V It offers low on-resistance Fast switching speed
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