DiodesZetex Dual 2 Type N-Channel MOSFET, 30 V Enhancement, 6-Pin UDFN-2020 DMT3020UFDB-7

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 25 units)*

Kr.112 40 

(exc. VAT)

Kr.140 50 

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 3 000 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
25 - 25Kr. 4,496Kr. 112,40
50 - 75Kr. 4,407Kr. 110,18
100 - 225Kr. 3,354Kr. 83,85
250 - 975Kr. 3,286Kr. 82,15
1000 +Kr. 3,098Kr. 77,45

*price indicative

Packaging Options:
RS Stock No.:
246-7547
Mfr. Part No.:
DMT3020UFDB-7
Brand:
DiodesZetex
Find similar products by selecting one or more attributes.
Select all

Brand

DiodesZetex

Channel Type

Type N

Product Type

MOSFET

Maximum Drain Source Voltage Vds

30V

Package Type

UDFN-2020

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

0.03Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

12 V

Typical Gate Charge Qg @ Vgs

8.8nC

Maximum Power Dissipation Pd

0.86W

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Transistor Configuration

Dual

Standards/Approvals

RoHS

Number of Elements per Chip

2

Automotive Standard

No

The DiodesZetex makes a dual N-channel enhancement mode MOSFET, designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in U-DFN2020-6 packaging and 0.6mm profile makes it ideal for low profile applications . It offers fast switching and high efficiency. Its 100% unclamped inductive switching ensures more reliable and robust end application.

Maximum drain to source voltage is 30 V Maximum gate to source voltage is ±12 V It has PCB Footprint of 4mm^2 It offers low gate threshold voltage It provides an ESD protected Gate

Related links