DiodesZetex Type N-Channel MOSFET, 10.7 A, 12 V Enhancement, 8-Pin SOIC DMT68M8LSS-13

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 25 units)*

Kr.123 95 

(exc. VAT)

Kr.154 95 

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 2 000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
25 - 25Kr. 4,958Kr. 123,95
50 - 75Kr. 4,86Kr. 121,50
100 - 225Kr. 3,711Kr. 92,78
250 - 975Kr. 3,638Kr. 90,95
1000 +Kr. 3,418Kr. 85,45

*price indicative

Packaging Options:
RS Stock No.:
246-7558
Mfr. Part No.:
DMT68M8LSS-13
Brand:
DiodesZetex
Find similar products by selecting one or more attributes.
Select all

Brand

DiodesZetex

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

10.7A

Maximum Drain Source Voltage Vds

12V

Package Type

SOIC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

41mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

1.73W

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

8 V

Maximum Operating Temperature

175°C

Height

1.45mm

Length

4.9mm

Width

3.85 mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

The DiodesZetex makes an N-channel enhancement mode MOSFET, designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in SO-8 packaging. It offers fast switching and high efficiency. Its 100% unclamped inductive switching ensures more reliable and robust end application. It has working temperature range of -55°C to +150°C.

Maximum drain to source voltage is 60 V Maximum gate to source voltage is ±20 V It offers low on-resistance It has low gate threshold voltage It offers an ESD protected gate

Related links