STMicroelectronics STL Type N-Channel MOSFET, 55 A, 12 V Enhancement, 8-Pin PowerFLAT
- RS Stock No.:
- 248-4901P
- Mfr. Part No.:
- STL325N4LF8AG
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal 10 units (supplied on a continuous strip)*
Kr.255 10
(exc. VAT)
Kr.318 90
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- 2 810 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 10 - 18 | Kr. 25,51 |
| 20 - 48 | Kr. 22,935 |
| 50 - 98 | Kr. 20,59 |
| 100 + | Kr. 19,62 |
*price indicative
- RS Stock No.:
- 248-4901P
- Mfr. Part No.:
- STL325N4LF8AG
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Package Type | PowerFLAT | |
| Series | STL | |
| Mount Type | Through Hole | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.5V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 188W | |
| Typical Gate Charge Qg @ Vgs | 41nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 6mm | |
| Standards/Approvals | UL | |
| Width | 4.9 mm | |
| Height | 1mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 12V | ||
Package Type PowerFLAT | ||
Series STL | ||
Mount Type Through Hole | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.5V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 188W | ||
Typical Gate Charge Qg @ Vgs 41nC | ||
Maximum Operating Temperature 175°C | ||
Length 6mm | ||
Standards/Approvals UL | ||
Width 4.9 mm | ||
Height 1mm | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics product is a N channel Power MOSFET that utilizes STripFET F8 technology featuring an enhanced trench gate structure. It ensures very low on state resistance while reducing internal capacitances and gate charge for faster and more efficient switching.
Used for switching applications
MSL1 grade
AEC-Q101 qualified
175 degree C operating temperature
100 percent avalanche tested
Wettable flank package