Infineon IMBG Type N-Channel MOSFET, 64 A, 75 V Enhancement, 7-Pin TO-263-7

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Subtotal (1 reel of 1000 units)*

Kr.56 984 00 

(exc. VAT)

Kr.71 230 00 

(inc. VAT)

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1000 +Kr. 56,984Kr. 56 984,00

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RS Stock No.:
248-9314
Mfr. Part No.:
IMBG65R039M1HXTMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

64A

Maximum Drain Source Voltage Vds

75V

Package Type

TO-263-7

Series

IMBG

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

3mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

81W

Typical Gate Charge Qg @ Vgs

80nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon SiC MOSFET is a 650 V CoolSiC is built over the solid silicon carbide technology, leveraging the wide bandgap SiC material characteristics, the 650 V CoolSiC MOSFET offers a unique combination of performance, reliability and ease of use, suitable for high temperature and harsh operations, it enables the simplified and cost effective deployment of the highest system efficiency.

Optimized switching behaviour at higher currents

Commutation robust fast body diode with low Qf

Superior gate oxide reliability

Tj,max-175°C and excellent thermal behaviour

Lower RDS(on) and pulse current dependency on temperature

Increased avalanche capability

Compatible with standard drivers

Kelvin source provides upto 4 times lower switching losses

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