ROHM RW4E065GN Type N-Channel MOSFET, 10.7 A, 30 V Enhancement, 7-Pin HEML1616L7 RW4E065GNTCL1

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Subtotal (1 pack of 10 units)*

Kr.111 31 

(exc. VAT)

Kr.139 14 

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 40Kr. 11,131Kr. 111,31
50 - 90Kr. 10,857Kr. 108,57
100 - 240Kr. 8,694Kr. 86,94
250 - 990Kr. 8,488Kr. 84,88
1000 +Kr. 7,676Kr. 76,76

*price indicative

Packaging Options:
RS Stock No.:
249-1136
Mfr. Part No.:
RW4E065GNTCL1
Brand:
ROHM
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Brand

ROHM

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

10.7A

Maximum Drain Source Voltage Vds

30V

Package Type

HEML1616L7

Series

RW4E065GN

Pin Count

7

Maximum Drain Source Resistance Rds

2.7mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

104W

Typical Gate Charge Qg @ Vgs

4.3nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The ROHM N channel power MOSFET with low on-resistance and fast switching, suitable for the switching application, has 30 V drain-source voltage and 6.5 A drain current, taping packing type.

Low on-resistance

Pb-free plating

RoHS compliant

Halogen free

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