STMicroelectronics N-Channel MOSFET, 30 A, 650 V, 7-Pin H2PAK-7 SCT040H65G3AG
- RS Stock No.:
- 249-6653
- Mfr. Part No.:
- SCT040H65G3AG
- Brand:
- STMicroelectronics
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 249-6653
- Mfr. Part No.:
- SCT040H65G3AG
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 30 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | H2PAK-7 | |
| Mounting Type | Surface Mount | |
| Pin Count | 7 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 30 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type H2PAK-7 | ||
Mounting Type Surface Mount | ||
Pin Count 7 | ||
The STMicroelectronics silicon carbide Power MOSFET device has been developed using STs advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
AEC-Q101 qualified
Very low RDS(on) over the entire temperature range
High speed switching performances
Very fast and robust intrinsic body diode
Source sensing pin for increased efficiency
Very low RDS(on) over the entire temperature range
High speed switching performances
Very fast and robust intrinsic body diode
Source sensing pin for increased efficiency
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