Infineon AUIRFS Type N-Channel MOSFET, 195 A, 40 V, 3-Pin TO-220

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Subtotal (1 tube of 50 units)*

Kr.2 432 60 

(exc. VAT)

Kr.3 040 75 

(inc. VAT)

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  • 950 unit(s) ready to ship
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Units
Per unit
Per Tube*
50 +Kr. 48,652Kr. 2 432,60

*price indicative

RS Stock No.:
249-6871
Mfr. Part No.:
AUIRFB8409
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

195A

Maximum Drain Source Voltage Vds

40V

Package Type

TO-220

Series

AUIRFS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3mΩ

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

80nC

Maximum Power Dissipation Pd

81W

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon HEXFET Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in automotive and a wide variety of other applications.

Advance planner technology

LowOn-Resistance

Dynamic dV/dT Rating

175 C operating temperature

Fast switching

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