Infineon AUIRFS Type N-Channel MOSFET, 72 A, 20 V, 3-Pin TO-263 AUIRFS4127TRL
- RS Stock No.:
- 249-6876
- Mfr. Part No.:
- AUIRFS4127TRL
- Brand:
- Infineon
Bulk discount available
Subtotal (1 unit)*
Kr.72 11
(exc. VAT)
Kr.90 14
(inc. VAT)
FREE delivery for online orders over 500,00 kr
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- Shipping from 30. mars 2026
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Units | Per unit |
|---|---|
| 1 - 9 | Kr. 72,11 |
| 10 - 24 | Kr. 68,53 |
| 25 - 49 | Kr. 65,67 |
| 50 - 99 | Kr. 62,69 |
| 100 + | Kr. 58,46 |
*price indicative
- RS Stock No.:
- 249-6876
- Mfr. Part No.:
- AUIRFS4127TRL
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 72A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | AUIRFS | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 81W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 72A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series AUIRFS | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 81W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon HEXFET Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in automotive and a wide variety of other applications.
Advance planner technology
LowOn-Resistance
Dynamic dV/dT Rating
175 C operating temperature
Fast switching
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