Infineon iPB Type N-Channel MOSFET, 35 A, 100 V Enhancement, 3-Pin TO-263

View all MOSFETs
Bulk discount available

Subtotal (1 reel of 1000 units)*

Kr.10 718 00 

(exc. VAT)

Kr.13 398 00 

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • 1 000 unit(s) shipping from 15. januar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
1000 - 1000Kr. 10,718Kr. 10 718,00
2000 +Kr. 10,182Kr. 10 182,00

*price indicative

RS Stock No.:
249-6901
Mfr. Part No.:
IPB35N10S3L26ATMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

35A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-263

Series

iPB

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.7mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

81W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

80nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon OptiMOS is power MOSFET for automotive applications. Operating channel is N. It is AEC Q101 qualified. MSL1 up to 260°C peak reflow. Green Product (RoHS compliant) and it is 100% Avalanche tested.

175°C operating temperature

Related links