Infineon IPD Type N-Channel MOSFET, 90 A, 100 V Enhancement, 3-Pin TO-252 IPD90N10S406ATMA1

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Kr.54 68 

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Kr.68 36 

(inc. VAT)

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2 - 18Kr. 27,34Kr. 54,68
20 - 48Kr. 24,31Kr. 48,62
50 - 98Kr. 22,65Kr. 45,30
100 - 198Kr. 20,99Kr. 41,98
200 +Kr. 19,675Kr. 39,35

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Packaging Options:
RS Stock No.:
249-6916
Mfr. Part No.:
IPD90N10S406ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

90A

Maximum Drain Source Voltage Vds

100V

Series

IPD

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.7mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

80nC

Maximum Power Dissipation Pd

81W

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon OptiMOS is power MOSFET for automotive applications. Operating channel is N. It is AEC Q101 qualified. MSL1 up to 260°C peak reflow. Green Product (RoHS compliant) and it is 100% Avalanche tested.

175°C operating temperature

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