Infineon IPD Type N-Channel MOSFET, 60 A, 100 V Enhancement, 3-Pin TO-252

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Subtotal (1 reel of 2500 units)*

Kr.12 670 00 

(exc. VAT)

Kr.15 837 50 

(inc. VAT)

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Units
Per unit
Per Reel*
2500 +Kr. 5,068Kr. 12 670,00

*price indicative

RS Stock No.:
258-3848
Mfr. Part No.:
IPD60N10S412ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-252

Series

IPD

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

12.2mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

94W

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

26nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon OptiMOS-T2 power-transistor is P-channel normal level enhancement mode. It has 175°C operating temperature.

AEC qualified

MSL1 up to 260°C peak reflow

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