Infineon IPD Type N-Channel MOSFET, 60 A, 100 V Enhancement, 3-Pin TO-252 IPD60N10S412ATMA1

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Subtotal (1 pack of 2 units)*

Kr.35 59 

(exc. VAT)

Kr.44 488 

(inc. VAT)

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Per Pack*
2 - 18Kr. 17,795Kr. 35,59
20 - 48Kr. 15,56Kr. 31,12
50 - 98Kr. 14,585Kr. 29,17
100 - 198Kr. 13,555Kr. 27,11
200 +Kr. 12,64Kr. 25,28

*price indicative

Packaging Options:
RS Stock No.:
258-3849
Mfr. Part No.:
IPD60N10S412ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

100V

Series

IPD

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

12.2mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

94W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

26nC

Forward Voltage Vf

1V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon OptiMOS-T2 power-transistor is P-channel normal level enhancement mode. It has 175°C operating temperature.

AEC qualified

MSL1 up to 260°C peak reflow

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