Infineon IPD Type N-Channel MOSFET, 14.7 A, 600 V Enhancement, 3-Pin TO-252

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Subtotal (1 reel of 2500 units)*

Kr.13 362 50 

(exc. VAT)

Kr.16 702 50 

(inc. VAT)

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Units
Per unit
Per Reel*
2500 +Kr. 5,345Kr. 13 362,50

*price indicative

RS Stock No.:
217-2525
Mfr. Part No.:
IPD60R400CEAUMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

14.7A

Maximum Drain Source Voltage Vds

600V

Series

IPD

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

400mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

9.4nC

Forward Voltage Vf

0.9V

Minimum Operating Temperature

-40°C

Maximum Power Dissipation Pd

41W

Maximum Operating Temperature

150°C

Height

2.41mm

Standards/Approvals

No

Width

6.22 mm

Length

6.73mm

Automotive Standard

No

The Infineon CoolMOS™ CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600V, 650V and 700V CoolMOS™ CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets.

Narrow margins between typical and max R DS(on)

Reduced energy stored in output capacitance (E oss)

Good body diode ruggedness and reduced reverse recovery charge (Q rr)

Optimized integrated R g

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