Infineon IPD Type N-Channel MOSFET, 9 A, 600 V Enhancement, 3-Pin TO-252 IPD60R360P7SAUMA1

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Subtotal (1 pack of 20 units)*

Kr.183 82 

(exc. VAT)

Kr.229 78 

(inc. VAT)

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Per Pack*
20 - 80Kr. 9,191Kr. 183,82
100 - 180Kr. 8,729Kr. 174,58
200 - 480Kr. 8,369Kr. 167,38
500 - 980Kr. 8,003Kr. 160,06
1000 +Kr. 7,448Kr. 148,96

*price indicative

Packaging Options:
RS Stock No.:
217-2524
Mfr. Part No.:
IPD60R360P7SAUMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

9A

Maximum Drain Source Voltage Vds

600V

Series

IPD

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

360mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.9V

Typical Gate Charge Qg @ Vgs

9.4nC

Minimum Operating Temperature

-40°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

41W

Maximum Operating Temperature

150°C

Width

6.22 mm

Length

6.73mm

Height

2.41mm

Standards/Approvals

No

Automotive Standard

No

Distrelec Product Id

304-39-407

The Infineon 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.

600V P7 enables excellent FOM R DS(on)xE oss and R DS(on)xQ G

ESD ruggedness of ≥ 2kV (HBM class 2)

Integrated gate resistor R G

Rugged body diode

Wide portfolio in through hole and surface mount packages

Both standard grade and industrial grade parts are available

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