Infineon IPD Type N-Channel MOSFET, 5 A, 600 V Enhancement, 3-Pin TO-252 IPD60R1K5CEAUMA1

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Subtotal (1 pack of 50 units)*

Kr.281 40 

(exc. VAT)

Kr.351 75 

(inc. VAT)

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Units
Per unit
Per Pack*
50 - 50Kr. 5,628Kr. 281,40
100 - 200Kr. 4,391Kr. 219,55
250 - 450Kr. 4,109Kr. 205,45
500 - 1200Kr. 3,828Kr. 191,40
1250 +Kr. 3,546Kr. 177,30

*price indicative

Packaging Options:
RS Stock No.:
217-2521
Mfr. Part No.:
IPD60R1K5CEAUMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

5A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-252

Series

IPD

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.5Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

9.4nC

Minimum Operating Temperature

-40°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

49W

Forward Voltage Vf

0.9V

Maximum Operating Temperature

150°C

Length

6.73mm

Height

2.41mm

Width

6.22 mm

Standards/Approvals

No

Automotive Standard

No

The Infineon CoolMOS™ CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600V, 650V and 700V CoolMOS™ CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets.

Narrow margins between typical and max R DS(on)

Reduced energy stored in output capacitance (E oss)

Good body diode ruggedness and reduced reverse recovery charge (Q rr)

Optimized integrated R g

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