Infineon IPD Type N-Channel MOSFET, 6 A, 600 V Enhancement, 3-Pin TO-252 IPD60R600P7ATMA1

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Subtotal (1 pack of 20 units)*

Kr.73 18 

(exc. VAT)

Kr.91 48 

(inc. VAT)

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Units
Per unit
Per Pack*
20 - 80Kr. 3,659Kr. 73,18
100 - 180Kr. 3,478Kr. 69,56
200 - 480Kr. 3,329Kr. 66,58
500 - 980Kr. 3,181Kr. 63,62
1000 +Kr. 2,963Kr. 59,26

*price indicative

Packaging Options:
RS Stock No.:
217-2528
Mfr. Part No.:
IPD60R600P7ATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-252

Series

IPD

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

600mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-40°C

Typical Gate Charge Qg @ Vgs

9nC

Maximum Power Dissipation Pd

41W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

0.9V

Maximum Operating Temperature

150°C

Length

6.73mm

Standards/Approvals

No

Height

2.41mm

Width

6.22 mm

Automotive Standard

No

The Infineon 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.

600V P7 enables excellent FOM R DS(on)xE oss DS(on)xQ G

ESD ruggedness of ≥ 2kV (HBM class 2)

Integrated gate resistor R G

Rugged body diode

Wide portfolio in through hole and surface mount packages

Both standard grade and industrial grade parts are available

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