Infineon IPD Type N-Channel MOSFET, 6 A, 600 V Enhancement, 3-Pin TO-252 IPD60R600P7SAUMA1

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Subtotal (1 pack of 25 units)*

Kr.142 775 

(exc. VAT)

Kr.178 475 

(inc. VAT)

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Units
Per unit
Per Pack*
25 +Kr. 5,711Kr. 142,78

*price indicative

Packaging Options:
RS Stock No.:
217-2530
Mfr. Part No.:
IPD60R600P7SAUMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

600V

Series

IPD

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

600mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-40°C

Typical Gate Charge Qg @ Vgs

9nC

Maximum Power Dissipation Pd

41W

Forward Voltage Vf

0.9V

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Width

6.22 mm

Standards/Approvals

No

Length

6.73mm

Height

2.41mm

Automotive Standard

No

The Infineon 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.

600V P7 enables excellent FOM R DS(on)xE oss DS(on)xQ GESD ruggedness of ≥ 2kV (HBM class 2)

Integrated gate resistor R G

Rugged body diode

Wide portfolio in through hole and surface mount packages

Both standard grade and industrial grade parts are available

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