Infineon IMBF N-Channel MOSFET, 64 A, 100 V N, 7-Pin TO-263

RS Stock No.:: 249-6949
Mfr. Part No.:: IMBF170R450M1XTMA1
Brand:: Infineon

Infineon IMBF N-Channel MOSFET, 64 A, 100 V N, 7-Pin TO-263

Subtotal (1 reel of 1000 units)*

Kr. 32 535,00

(exc. VAT)

Kr. 40 669,00

(inc. VAT)

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Shipping from 27 September 2027

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Units	Per unit	Per Reel*
1000 +	Kr. 32,535	Kr. 32 535,00

*price indicative

RS Stock No.:: 249-6949
Mfr. Part No.:: IMBF170R450M1XTMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	64A
	Maximum Drain Source Voltage Vds	100V
	Package Type	TO-263
	Series	IMBF
	Mount Type	Surface
	Pin Count	7
	Maximum Drain Source Resistance Rds	1.7mΩ
	Channel Mode	N
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	80nC
	Maximum Power Dissipation Pd	81W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 64A
	Maximum Drain Source Voltage Vds 100V
	Package Type TO-263
	Series IMBF
	Mount Type Surface
	Pin Count 7
	Maximum Drain Source Resistance Rds 1.7mΩ
	Channel Mode N
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 80nC
	Maximum Power Dissipation Pd 81W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IMBF170R450M1XTMA1

Infineon IMBF Series MOSFET, 100V Drain Source Voltage, 64A Continuous Drain Current - IMBF170R450M1XTMA1

This MOSFET is a high-current N-channel transistor designed for power switching in surface-mounted assemblies. It operates across a wide temperature span suitable for demanding environments and provides low conduction losses and appreciable power handling within systems requiring robust gate-drive control.

Features and Benefits:

• Low on-resistance of 1.7mΩ reduces conduction losses and heat
• 100V drain-source rating enables medium-voltage switching applications
• 64A continuous drain current supports high-current power stages
• 81W power dissipation permits sustained thermal loading
• 80nC typical gate charge allows efficient switching with moderate drive
• 20V gate-source limit provides margin for rugged gate-drive designs

Applications

• Suitable for DC-DC converters in industrial power supplies
• Ideal for motor-drive stages in power-electronics systems
• Used for load switching in high-current battery management
• Can be used for synchronous rectification in power converters
• Appropriate for surface-mount power modules on Compact boards

What gate-drive considerations are necessary for Rapid switching?

Use a driver capable of sourcing and sinking the 80nC gate charge to achieve the desired dV/dt while managing switching losses.

How should thermal management be approached in designs?

Implement adequate PCB copper area and thermal vias under the TO-263 footprint to dissipate the 81W junction loss during continuous operation.

What limits protect the device from excessive gate voltage?

Keep gate-drive amplitude within the 20V gate-source maximum to avoid gate-oxide stress and possible device failure.

How does the operating temperature range affect application selection?

The −55°C to 175°C range enables deployment in environments with extreme cold or elevated ambient temperatures where other components may be unsuitable.