Infineon IMBF N-Channel MOSFET, 64 A, 100 V N, 7-Pin TO-263 IMBF170R450M1XTMA1
- RS Stock No.:
- 249-6950
- Mfr. Part No.:
- IMBF170R450M1XTMA1
- Brand:
- Infineon
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Kr. 74,82
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Kr. 93,52
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|---|---|
| 1 - 9 | Kr. 74,82 |
| 10 - 24 | Kr. 71,16 |
| 25 - 49 | Kr. 68,07 |
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| 100 + | Kr. 60,52 |
*price indicative
- RS Stock No.:
- 249-6950
- Mfr. Part No.:
- IMBF170R450M1XTMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 64A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-263 | |
| Series | IMBF | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 1.7mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 81W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 64A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-263 | ||
Series IMBF | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 1.7mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 81W | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Infineon IMBF Series MOSFET, 100V Drain Source Voltage, 64A Continuous Drain Current - IMBF170R450M1XTMA1
This MOSFET is a high-current N-channel transistor designed for power switching in surface-mounted assemblies. It operates across a wide temperature span suitable for demanding environments and provides low conduction losses and appreciable power handling within systems requiring robust gate-drive control.
Features and Benefits:
• Low on-resistance of 1.7mΩ reduces conduction losses and heat
• 100V drain-source rating enables medium-voltage switching applications
• 64A continuous drain current supports high-current power stages
• 81W power dissipation permits sustained thermal loading
• 80nC typical gate charge allows efficient switching with moderate drive
• 20V gate-source limit provides margin for rugged gate-drive designs
• 100V drain-source rating enables medium-voltage switching applications
• 64A continuous drain current supports high-current power stages
• 81W power dissipation permits sustained thermal loading
• 80nC typical gate charge allows efficient switching with moderate drive
• 20V gate-source limit provides margin for rugged gate-drive designs
Applications
• Suitable for DC-DC converters in industrial power supplies
• Ideal for motor-drive stages in power-electronics systems
• Used for load switching in high-current battery management
• Can be used for synchronous rectification in power converters
• Appropriate for surface-mount power modules on Compact boards
• Ideal for motor-drive stages in power-electronics systems
• Used for load switching in high-current battery management
• Can be used for synchronous rectification in power converters
• Appropriate for surface-mount power modules on Compact boards
What gate-drive considerations are necessary for Rapid switching?
Use a driver capable of sourcing and sinking the 80nC gate charge to achieve the desired dV/dt while managing switching losses.
How should thermal management be approached in designs?
Implement adequate PCB copper area and thermal vias under the TO-263 footprint to dissipate the 81W junction loss during continuous operation.
What limits protect the device from excessive gate voltage?
Keep gate-drive amplitude within the 20V gate-source maximum to avoid gate-oxide stress and possible device failure.
How does the operating temperature range affect application selection?
The −55°C to 175°C range enables deployment in environments with extreme cold or elevated ambient temperatures where other components may be unsuitable.
Related links
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