Infineon IMBG Type N-Channel MOSFET, 18 A, 1200 V N, 7-Pin TO-263 IMBG120R220M1HXTMA1

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Kr.63 75 

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Kr.79 69 

(inc. VAT)

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10 - 24Kr. 60,63
25 - 49Kr. 58,12
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100 +Kr. 51,59

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Packaging Options:
RS Stock No.:
249-6954
Mfr. Part No.:
IMBG120R220M1HXTMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

18A

Maximum Drain Source Voltage Vds

1200V

Series

IMBG

Package Type

TO-263

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

1.7mΩ

Channel Mode

N

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

81W

Typical Gate Charge Qg @ Vgs

80nC

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon silicon carbide MOSFET reduction of system complexity. It directly drive from fly-back controller. Efficiency improvement and cooling effort reduction. Enabling higher frequency.

Very low switching losses

Short circuit withstand time 3 μs

Fully controllable dV/dt

Benchmark gate threshold voltage, VGS(th) = 4.5V

Robust against parasitic turn on, 0V turn-off gate voltage can be applied

Robust body diode for hard commutation

XT interconnection technology for best-in-class thermal performance

Package creepage and clearance distance > 6.1mm

Sense pin for optimized switching performance

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