Infineon BSP Type N-Channel MOSFET, 0.68 A, 100 V Enhancement, 3-Pin SOT-223 BSP316PH6327XTSA1

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Subtotal (1 pack of 5 units)*

Kr.26 08 

(exc. VAT)

Kr.32 60 

(inc. VAT)

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5 - 45Kr. 5,216Kr. 26,08
50 - 120Kr. 4,576Kr. 22,88
125 - 245Kr. 4,278Kr. 21,39
250 - 495Kr. 3,958Kr. 19,79
500 +Kr. 3,706Kr. 18,53

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Packaging Options:
RS Stock No.:
250-0536
Mfr. Part No.:
BSP316PH6327XTSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

0.68A

Maximum Drain Source Voltage Vds

100V

Package Type

SOT-223

Series

BSP

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.4mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

80nC

Maximum Power Dissipation Pd

81W

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Distrelec Product Id

304-40-496

Automotive Standard

AEC-Q101

The Infineon makes this SIPMOS, Small-Signal-Transistor P-Channel, Enhancement mode mosfet. The device is dv/dt rated, P-channel, Enhancement mode transistor widely used in high-switching applications. It is avalanche rated and halogen-free.

Vds is 100 V, RDS(on) 1.8 Ω and Id is 0.68 A

Maximum power dissipation is 360 mW

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