Infineon BSP Type N-Channel MOSFET, 0.68 A, 100 V Enhancement, 3-Pin SOT-223

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Subtotal (1 reel of 1000 units)*

Kr.1 944 00 

(exc. VAT)

Kr.2 430 00 

(inc. VAT)

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1000 +Kr. 1,944Kr. 1 944,00

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RS Stock No.:
250-0535
Mfr. Part No.:
BSP316PH6327XTSA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

0.68A

Maximum Drain Source Voltage Vds

100V

Series

BSP

Package Type

SOT-223

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.4mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

81W

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

80nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon makes this SIPMOS, Small-Signal-Transistor P-Channel, Enhancement mode mosfet. The device is dv/dt rated, P-channel, Enhancement mode transistor widely used in high-switching applications. It is avalanche rated and halogen-free.

Vds is 100 V, RDS(on) 1.8 Ω and Id is 0.68 A

Maximum power dissipation is 360 mW

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