Infineon BSP Type N-Channel MOSFET, 0.12 A, 40 V Enhancement, 3-Pin SOT-223 BSP125H6433XTMA1

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Subtotal (1 pack of 5 units)*

Kr.28 52 

(exc. VAT)

Kr.35 65 

(inc. VAT)

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5 - 45Kr. 5,704Kr. 28,52
50 - 120Kr. 4,92Kr. 24,60
125 - 245Kr. 4,576Kr. 22,88
250 - 495Kr. 4,21Kr. 21,05
500 +Kr. 3,936Kr. 19,68

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Packaging Options:
RS Stock No.:
250-0528
Mfr. Part No.:
BSP125H6433XTMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

0.12A

Maximum Drain Source Voltage Vds

40V

Series

BSP

Package Type

SOT-223

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.4mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

81W

Typical Gate Charge Qg @ Vgs

80nC

Forward Voltage Vf

1V

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon Small Signal n-channel products are suitable for automotive applications. This SIPMOS Power-Transistor is an N-Channel, Enhancement mode with Vds of 600 V, Rds(on) 45 Ω and Id is 0.12 A. It is dv/dt rated.

Pb-free lead plating

Maximum power dissipation is 360mW

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