Infineon BSP Type N-Channel MOSFET, 0.12 A, 40 V Enhancement, 3-Pin SOT-223

Bulk discount available

Subtotal (1 reel of 4000 units)*

Kr.10 600 00 

(exc. VAT)

Kr.13 240 00 

(inc. VAT)

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Units
Per unit
Per Reel*
4000 - 4000Kr. 2,65Kr. 10 600,00
8000 +Kr. 2,517Kr. 10 068,00

*price indicative

RS Stock No.:
250-0527
Mfr. Part No.:
BSP125H6433XTMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

0.12A

Maximum Drain Source Voltage Vds

40V

Package Type

SOT-223

Series

BSP

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.4mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

81W

Typical Gate Charge Qg @ Vgs

80nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon Small Signal n-channel products are suitable for automotive applications. This SIPMOS Power-Transistor is an N-Channel, Enhancement mode with Vds of 600 V, Rds(on) 45 Ω and Id is 0.12 A. It is dv/dt rated.

Pb-free lead plating

Maximum power dissipation is 360mW

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