Vishay Type P-Channel MOSFET, 65.7 A, 60 V Enhancement, 8-Pin PowerPAK SO-8 SIR1309DP-T1-GE3
- RS Stock No.:
- 252-0271
- Mfr. Part No.:
- SIR1309DP-T1-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 10 units)*
Kr.87 97
(exc. VAT)
Kr.109 96
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Last RS stock
- Final 5 710 unit(s), ready to ship
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | Kr. 8,797 | Kr. 87,97 |
| 100 - 490 | Kr. 8,283 | Kr. 82,83 |
| 500 - 990 | Kr. 7,482 | Kr. 74,82 |
| 1000 - 2490 | Kr. 7,047 | Kr. 70,47 |
| 2500 + | Kr. 6,601 | Kr. 66,01 |
*price indicative
- RS Stock No.:
- 252-0271
- Mfr. Part No.:
- SIR1309DP-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 65.7A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerPAK SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.01mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 54nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 83W | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 6.15mm | |
| Width | 5.15 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 65.7A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerPAK SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.01mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 54nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 83W | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 6.15mm | ||
Width 5.15 mm | ||
Automotive Standard AEC-Q101 | ||
The Vishay siliconix MOSFET product line includes a diverse range of advanced technologies. MOSFETs are transistor devices which are controlled by a capacitor. The field effect means that they are controlled by voltage. P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the gate terminal is lower than the source voltage.
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