Vishay SQJQ186ER N-Channel MOSFET, 329 A, 30 V Enhancement, 8-Pin PowerPAK (8x8LR) SQJQ186ER-T1_GE3
- RS Stock No.:
- 252-0314
- Mfr. Part No.:
- SQJQ186ER-T1_GE3
- Brand:
- Vishay
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
Kr. 207,98
(exc. VAT)
Kr. 259,97
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | Kr. 41,596 | Kr. 207,98 |
| 25 - 45 | Kr. 39,102 | Kr. 195,51 |
| 50 - 120 | Kr. 35,372 | Kr. 176,86 |
| 125 - 245 | Kr. 33,268 | Kr. 166,34 |
| 250 + | Kr. 31,186 | Kr. 155,93 |
*price indicative
- RS Stock No.:
- 252-0314
- Mfr. Part No.:
- SQJQ186ER-T1_GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 329A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | SQJQ186ER | |
| Package Type | PowerPAK (8x8LR) | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0014mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 43nC | |
| Maximum Power Dissipation Pd | 214W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101 | |
| Width | 4.9mm | |
| Length | 6.15mm | |
| Height | 1.6mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 329A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series SQJQ186ER | ||
Package Type PowerPAK (8x8LR) | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0014mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 43nC | ||
Maximum Power Dissipation Pd 214W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101 | ||
Width 4.9mm | ||
Length 6.15mm | ||
Height 1.6mm | ||
Automotive Standard AEC-Q101 | ||
The Vishay automotive MOSFETs are manufactured on a dedicated process flow to in still ruggedness. Rated for a maximum junction temperature of 175 °C, the vishay siliconix AEC-Q101 qualified SQ series features low on-resistance n- and p-channel trench FET technologies in lead (Pb)- and halogen-free SO packages.
TrenchFET Gen IV power MOSFET
AEC-Q101 qualified
100 % Rg and UIS tested
Thin 1.9 mm height
Related links
- Vishay SQJQ186ER N-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK (8x8LR) SQJQ186ER-T1_GE3
- Vishay SQJQ184ER N-Channel MOSFET 80 V Enhancement, 8-Pin PowerPAK (8x8LR) SQJQ184ER-T1_GE3
- Vishay TrenchFET N-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK (8x8LR) SQJQ160ER-T1_GE3
- Vishay TrenchFET N-Channel MOSFET 150 V Enhancement, 8-Pin PowerPAK (8x8LR) SQJQ570ER-T1_GE3
- Vishay TrenchFET N-Channel MOSFET 100 V Enhancement, 8-Pin PowerPAK (8x8LR) SQJQ118ER-T1_GE3
- Vishay N-Channel MOSFET 80 V Enhancement, 8-Pin PowerPAK (8x8LR) SQJQ184E-T1_GE3
- Vishay TrenchFET P-Channel MOSFET -40 V Enhancement, 8-Pin PowerPAK (8x8LR) SQJQ141ELR-T1_GE3
- Vishay TrenchFET N-Channel Single MOSFETs 80 V Enhancement Mode, 8-Pin PowerPAK (8x8LR) SQJQ580ER-T1_GE3