Vishay Type N-Channel MOSFET, 11.3 A, 100 V PowerPAK SISS42LDN-T1-GE3
- RS Stock No.:
- 256-7435
- Mfr. Part No.:
- SISS42LDN-T1-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 5 units)*
Kr.98 27
(exc. VAT)
Kr.122 84
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- 5 970 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | Kr. 19,654 | Kr. 98,27 |
| 50 - 95 | Kr. 19,036 | Kr. 95,18 |
| 100 - 245 | Kr. 16,062 | Kr. 80,31 |
| 250 - 995 | Kr. 15,788 | Kr. 78,94 |
| 1000 + | Kr. 11,486 | Kr. 57,43 |
*price indicative
- RS Stock No.:
- 256-7435
- Mfr. Part No.:
- SISS42LDN-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 11.3A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PowerPAK | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 0.0149Ω | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 11.3A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PowerPAK | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 0.0149Ω | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay Semiconductor N-channel 100 V (D-S) mosfet very low RDS x Qg figure-of-merit (FOM) applications synchronous rectification, primary side switch, DC, DC converter, solar micro inverter, motor drive switch, battery and load switch, industrial.
TrenchFET gen IV power mosfet
Very low RDS x Qg figure-of-merit (FOM)
Tuned for the lowest RDS x Qoss FOM
100 % Rg and UIS tested
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