Infineon HEXFET Type N-Channel MOSFET, 100 A, 30 V, 8-Pin PQFN

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Subtotal (1 reel of 4000 units)*

Kr.20 208 00 

(exc. VAT)

Kr.25 260 00 

(inc. VAT)

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Units
Per unit
Per Reel*
4000 +Kr. 5,052Kr. 20 208,00

*price indicative

RS Stock No.:
257-5527
Mfr. Part No.:
IRFH5301TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

30V

Series

HEXFET

Package Type

PQFN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.85mΩ

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

37nC

Maximum Power Dissipation Pd

110W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1V

Maximum Operating Temperature

150°C

Height

0.9mm

Length

6mm

Width

5 mm

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon strongIRFET power MOSFET family is optimized for low RDS and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Industry standard surface-mount power package

Product qualification according to JEDEC standard

Silicon optimized for applications switching below <100 kHz

Softer body-diode compared to previous silicon generation

Wide portfolio available

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