Infineon HEXFET Type N-Channel MOSFET & Diode, 100 A, 30 V Enhancement, 8-Pin PQFN

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Subtotal (1 reel of 4000 units)*

Kr.23 808 00 

(exc. VAT)

Kr.29 760 00 

(inc. VAT)

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Units
Per unit
Per Reel*
4000 +Kr. 5,952Kr. 23 808,00

*price indicative

RS Stock No.:
220-7482
Mfr. Part No.:
IRFH5300TRPBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET & Diode

Channel Type

Type N

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

30V

Package Type

PQFN

Series

HEXFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.4mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

50nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

3.6W

Forward Voltage Vf

1V

Maximum Operating Temperature

150°C

Length

6mm

Standards/Approvals

RoHS

Height

0.9mm

Width

4.75 mm

Automotive Standard

No

The Infineon IRFH5300 is strong power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Logic level : Optimized for 5 V gate drive voltage

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